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SISS98DN-T1-GE3
SISS98DN-T1-GE3
Part Number:
SISS98DN-T1-GE3
Manufacturer:
Vishay Precision Group
Description:
Quantity:
6000 Pieces
Delivery Time:
1-2 days
Data sheet:
SISS98DN-T1-GE3.pdf

Introduction

SISS98DN-T1-GE3 best price and fast delivery.
ZTZ Technology is the distributor for SISS98DN-T1-GE3, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for SISS98DN-T1-GE3 by email, we will give you a best price according your plan.
Our email: rfq@ztztechnology.com

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Vgs(th) (Max) @ Id:4V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PowerPAK® 1212-8
Series:ThunderFET®
Rds On (Max) @ Id, Vgs:105 mOhm @ 7A, 10V
Power Dissipation (Max):57W (Tc)
Packaging:Original-Reel®
Package / Case:PowerPAK® 1212-8
Other Names:SISS98DN-T1-GE3DKR
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:608pF @ 100V
Gate Charge (Qg) (Max) @ Vgs:14nC @ 7.5V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):7.5V, 10V
Drain to Source Voltage (Vdss):200V
Detailed Description:N-Channel 200V 14.1A (Tc) 57W (Tc) Surface Mount PowerPAK® 1212-8
Current - Continuous Drain (Id) @ 25°C:14.1A (Tc)
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