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SISS71DN-T1-GE3
SISS71DN-T1-GE3
Part Number:
SISS71DN-T1-GE3
Manufacturer:
Vishay
Description:
19+
Quantity:
1353 Pieces
Delivery Time:
1-2 days
Data sheet:
SISS71DN-T1-GE3.pdf

Reference Price(In US Dollars)

  • 1 pcs$0.569
  • 10 pcs$0.523
  • 100 pcs$0.478
  • 500 pcs$0.432
  • 1000 pcs$0.387
This price is for reference only.Due to the high price fluctuation,
If you need to get the correct price,Please send your RFQ to rfq@ztztechnology.com

Introduction

SISS71DN-T1-GE3 best price and fast delivery.
ZTZ Technology is the distributor for SISS71DN-T1-GE3, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for SISS71DN-T1-GE3 by email, we will give you a best price according your plan.
Our email: rfq@ztztechnology.com

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Vgs(th) (Max) @ Id:2.5V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PowerPAK® 1212-8S (3.3x3.3)
Series:ThunderFET®
Rds On (Max) @ Id, Vgs:59 mOhm @ 5A, 10V
Power Dissipation (Max):57W (Tc)
Packaging:Original-Reel®
Package / Case:8-PowerVDFN
Other Names:SISS71DN-T1-GE3DKR
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:1050pF @ 50V
Gate Charge (Qg) (Max) @ Vgs:15nC @ 4.5V
FET Type:P-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):100V
Detailed Description:P-Channel 100V 23A (Tc) 57W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3)
Current - Continuous Drain (Id) @ 25°C:23A (Tc)
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