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SI2305ADS-T1-E3
SI2305ADS-T1-E3
Part Number:
SI2305ADS-T1-E3
Manufacturer:
Vishay
Description:
13+
Quantity:
3705 Pieces
Delivery Time:
1-2 days
Data sheet:
SI2305ADS-T1-E3.pdf

Introduction

SI2305ADS-T1-E3 best price and fast delivery.
ZTZ Technology is the distributor for SI2305ADS-T1-E3, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for SI2305ADS-T1-E3 by email, we will give you a best price according your plan.
Our email: rfq@ztztechnology.com

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Vgs(th) (Max) @ Id:800mV @ 250µA
Vgs (Max):±8V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:SOT-23-3 (TO-236)
Series:TrenchFET®
Rds On (Max) @ Id, Vgs:40 mOhm @ 4.1A, 4.5V
Power Dissipation (Max):960mW (Ta), 1.7W (Tc)
Packaging:Original-Reel®
Package / Case:TO-236-3, SC-59, SOT-23-3
Other Names:SI2305ADS-T1-E3DKR
Operating Temperature:-50°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:740pF @ 4V
Gate Charge (Qg) (Max) @ Vgs:15nC @ 4.5V
FET Type:P-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Drain to Source Voltage (Vdss):8V
Detailed Description:P-Channel 8V 5.4A (Tc) 960mW (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)
Current - Continuous Drain (Id) @ 25°C:5.4A (Tc)
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