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NTD4809N-35G
NTD4809N-35G
Part Number:
NTD4809N-35G
Manufacturer:
AMI Semiconductor / ON Semiconductor
Description:
Quantity:
5060 Pieces
Delivery Time:
1-2 days
Data sheet:
NTD4809N-35G.pdf

Introduction

NTD4809N-35G best price and fast delivery.
ZTZ Technology is the distributor for NTD4809N-35G, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for NTD4809N-35G by email, we will give you a best price according your plan.
Our email: rfq@ztztechnology.com

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Vgs(th) (Max) @ Id:2.5V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:I-PAK
Series:-
Rds On (Max) @ Id, Vgs:9 mOhm @ 30A, 10V
Power Dissipation (Max):1.4W (Ta), 52W (Tc)
Packaging:Tube
Package / Case:TO-251-3 Stub Leads, IPak
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:1456pF @ 12V
Gate Charge (Qg) (Max) @ Vgs:13nC @ 4.5V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 11.5V
Drain to Source Voltage (Vdss):30V
Detailed Description:N-Channel 30V 9.6A (Ta), 58A (Tc) 1.4W (Ta), 52W (Tc) Through Hole I-PAK
Current - Continuous Drain (Id) @ 25°C:9.6A (Ta), 58A (Tc)
Email:rfq@ztztechnology.com

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