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Si3493BDV-T1-E3
Si3493BDV-T1-E3
Part Number:
Si3493BDV-T1-E3
Manufacturer:
Vishay
Description:
2020+
Quantity:
3000 Pieces
Delivery Time:
1-2 days
Data sheet:
Si3493BDV-T1-E3.pdf

Reference Price(In US Dollars)

  • 1 pcs$0.32
  • 10 pcs$0.294
  • 100 pcs$0.269
  • 500 pcs$0.243
  • 1000 pcs$0.218
This price is for reference only.Due to the high price fluctuation,
If you need to get the correct price,Please send your RFQ to rfq@ztztechnology.com

Introduction

Si3493BDV-T1-E3 best price and fast delivery.
ZTZ Technology is the distributor for Si3493BDV-T1-E3, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for Si3493BDV-T1-E3 by email, we will give you a best price according your plan.
Our email: rfq@ztztechnology.com

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Vgs(th) (Max) @ Id:900mV @ 250µA
Vgs (Max):±8V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:6-TSOP
Series:TrenchFET®
Rds On (Max) @ Id, Vgs:27.5 mOhm @ 7A, 4.5V
Power Dissipation (Max):2.08W (Ta), 2.97W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:SOT-23-6 Thin, TSOT-23-6
Other Names:SI3493BDV-T1-E3TR
SI3493BDVT1E3
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:1805pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:43.5nC @ 5V
FET Type:P-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Drain to Source Voltage (Vdss):20V
Detailed Description:P-Channel 20V 8A (Tc) 2.08W (Ta), 2.97W (Tc) Surface Mount 6-TSOP
Current - Continuous Drain (Id) @ 25°C:8A (Tc)
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