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Si3440ADV-T1-GE3
Si3440ADV-T1-GE3
Part Number:
Si3440ADV-T1-GE3
Manufacturer:
Vishay
Description:
20+
Quantity:
3000 Pieces
Delivery Time:
1-2 days
Data sheet:
Si3440ADV-T1-GE3.pdf

Reference Price(In US Dollars)

  • 1 pcs$0.164
  • 10 pcs$0.151
  • 100 pcs$0.138
  • 500 pcs$0.125
  • 1000 pcs$0.112
This price is for reference only.Due to the high price fluctuation,
If you need to get the correct price,Please send your RFQ to rfq@ztztechnology.com

Introduction

Si3440ADV-T1-GE3 best price and fast delivery.
ZTZ Technology is the distributor for Si3440ADV-T1-GE3, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for Si3440ADV-T1-GE3 by email, we will give you a best price according your plan.
Our email: rfq@ztztechnology.com

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Vgs(th) (Max) @ Id:4V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:6-TSOP
Series:TrenchFET®
Rds On (Max) @ Id, Vgs:380 mOhm @ 1.5A, 10V
Power Dissipation (Max):3.6W (Tc)
Packaging:Cut Tape (CT)
Package / Case:SOT-23-6 Thin, TSOT-23-6
Other Names:SI3440ADV-T1-GE3CT
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:80pF @ 75V
Gate Charge (Qg) (Max) @ Vgs:4nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):7.5V, 10V
Drain to Source Voltage (Vdss):150V
Detailed Description:N-Channel 150V 2.2A (Tc) 3.6W (Tc) Surface Mount 6-TSOP
Current - Continuous Drain (Id) @ 25°C:2.2A (Tc)
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