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STQ1HN60K3-AP
STQ1HN60K3-AP
Part Number:
STQ1HN60K3-AP
Manufacturer:
STMicroelectronics
Description:
Quantity:
2590 Pieces
Delivery Time:
1-2 days
Data sheet:
STQ1HN60K3-AP.pdf

Reference Price(In US Dollars)

  • 1 pcs$0.33
  • 10 pcs$0.304
  • 100 pcs$0.277
  • 500 pcs$0.251
  • 1000 pcs$0.224
This price is for reference only.Due to the high price fluctuation,
If you need to get the correct price,Please send your RFQ to rfq@ztztechnology.com

Introduction

STQ1HN60K3-AP best price and fast delivery.
ZTZ Technology is the distributor for STQ1HN60K3-AP, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for STQ1HN60K3-AP by email, we will give you a best price according your plan.
Our email: rfq@ztztechnology.com

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Vgs(th) (Max) @ Id:4.5V @ 50µA
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-92-3
Series:SuperMESH3™
Rds On (Max) @ Id, Vgs:8 Ohm @ 600mA, 10V
Power Dissipation (Max):3W (Tc)
Packaging:Tape & Box (TB)
Package / Case:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Other Names:497-13784-3
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:38 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:140pF @ 50V
Gate Charge (Qg) (Max) @ Vgs:9.5nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):600V
Detailed Description:N-Channel 600V 400mA (Tc) 3W (Tc) Through Hole TO-92-3
Current - Continuous Drain (Id) @ 25°C:400mA (Tc)
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