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STB21NM60N-1
STB21NM60N-1
Part Number:
STB21NM60N-1
Manufacturer:
STMicroelectronics
Description:
Quantity:
2000 Pieces
Delivery Time:
1-2 days
Data sheet:
STB21NM60N-1.pdf

Reference Price(In US Dollars)

  • 1 pcs$3.623
  • 10 pcs$3.333
  • 100 pcs$3.043
  • 500 pcs$2.753
  • 1000 pcs$2.464
This price is for reference only.Due to the high price fluctuation,
If you need to get the correct price,Please send your RFQ to rfq@ztztechnology.com

Introduction

STB21NM60N-1 best price and fast delivery.
ZTZ Technology is the distributor for STB21NM60N-1, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for STB21NM60N-1 by email, we will give you a best price according your plan.
Our email: rfq@ztztechnology.com

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Vgs(th) (Max) @ Id:4V @ 250µA
Vgs (Max):±25V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:I2PAK
Series:MDmesh™
Rds On (Max) @ Id, Vgs:220 mOhm @ 8.5A, 10V
Power Dissipation (Max):140W (Tc)
Packaging:Tube
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
Other Names:497-5728
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:1900pF @ 50V
Gate Charge (Qg) (Max) @ Vgs:66nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):600V
Detailed Description:N-Channel 600V 17A (Tc) 140W (Tc) Through Hole I2PAK
Current - Continuous Drain (Id) @ 25°C:17A (Tc)
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