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SISA04DN-T1-GE3
SISA04DN-T1-GE3
Part Number:
SISA04DN-T1-GE3
Manufacturer:
Vishay Precision Group
Description:
Quantity:
2997 Pieces
Delivery Time:
1-2 days
Data sheet:
SISA04DN-T1-GE3.pdf

Introduction

SISA04DN-T1-GE3 best price and fast delivery.
ZTZ Technology is the distributor for SISA04DN-T1-GE3, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for SISA04DN-T1-GE3 by email, we will give you a best price according your plan.
Our email: rfq@ztztechnology.com

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Vgs(th) (Max) @ Id:2.2V @ 250µA
Vgs (Max):+20V, -16V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PowerPAK® 1212-8
Series:TrenchFET®
Rds On (Max) @ Id, Vgs:2.15 mOhm @ 15A, 10V
Power Dissipation (Max):3.7W (Ta), 52W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:PowerPAK® 1212-8
Other Names:SISA04DN-T1-GE3TR
SISA04DNT1GE3
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:32 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:3595pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:77nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):30V
Detailed Description:N-Channel 30V 40A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
Current - Continuous Drain (Id) @ 25°C:40A (Tc)
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