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SIHF22N60E-GE3
SIHF22N60E-GE3
Part Number:
SIHF22N60E-GE3
Manufacturer:
Vishay
Description:
20+
Quantity:
2311 Pieces
Delivery Time:
1-2 days
Data sheet:
SIHF22N60E-GE3.pdf

Reference Price(In US Dollars)

  • 1 pcs$2.335
  • 10 pcs$2.148
  • 100 pcs$1.961
  • 500 pcs$1.775
  • 1000 pcs$1.588
This price is for reference only.Due to the high price fluctuation,
If you need to get the correct price,Please send your RFQ to rfq@ztztechnology.com

Introduction

SIHF22N60E-GE3 best price and fast delivery.
ZTZ Technology is the distributor for SIHF22N60E-GE3, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for SIHF22N60E-GE3 by email, we will give you a best price according your plan.
Our email: rfq@ztztechnology.com

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Vgs(th) (Max) @ Id:4V @ 250µA
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-220 Full Pack
Series:E
Rds On (Max) @ Id, Vgs:180 mOhm @ 11A, 10V
Power Dissipation (Max):35W (Tc)
Packaging:Cut Tape (CT)
Package / Case:TO-220-3 Full Pack
Other Names:SIHF22N60E-GE3CT
SIHF22N60E-GE3CT-ND
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:1920pF @ 100V
Gate Charge (Qg) (Max) @ Vgs:86nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):600V
Detailed Description:N-Channel 600V 21A (Tc) 35W (Tc) Through Hole TO-220 Full Pack
Current - Continuous Drain (Id) @ 25°C:21A (Tc)
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