| Condition | New and Original |
|---|---|
| Origin | Contact us |
| Distributor | Boser Technology |
| Vgs(th) (Max) @ Id: | 1.8V @ 250µA |
| Vgs (Max): | ±25V |
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | 8-SO |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 18.5 mOhm @ 9A, 10V |
| Power Dissipation (Max): | 1.3W (Ta) |
| Packaging: | Tape & Reel (TR) |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
| Other Names: | SI4800BDY-T1-E3TR SI4800BDYT1E3 |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 33 Weeks |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 5V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Drain to Source Voltage (Vdss): | 30V |
| Detailed Description: | N-Channel 30V 6.5A (Ta) 1.3W (Ta) Surface Mount 8-SO |
| Current - Continuous Drain (Id) @ 25°C: | 6.5A (Ta) |
| Email: |