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SI4778DY-T1-E3
SI4778DY-T1-E3
Part Number:
SI4778DY-T1-E3
Manufacturer:
Vishay
Description:
2020+
Quantity:
2000 Pieces
Delivery Time:
1-2 days
Data sheet:
SI4778DY-T1-E3.pdf

Reference Price(In US Dollars)

  • 1 pcs$0.317
  • 10 pcs$0.292
  • 100 pcs$0.266
  • 500 pcs$0.241
  • 1000 pcs$0.216
This price is for reference only.Due to the high price fluctuation,
If you need to get the correct price,Please send your RFQ to rfq@ztztechnology.com

Introduction

SI4778DY-T1-E3 best price and fast delivery.
ZTZ Technology is the distributor for SI4778DY-T1-E3, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for SI4778DY-T1-E3 by email, we will give you a best price according your plan.
Our email: rfq@ztztechnology.com

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Vgs(th) (Max) @ Id:2.2V @ 250µA
Vgs (Max):±16V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:8-SO
Series:TrenchFET®
Rds On (Max) @ Id, Vgs:23 mOhm @ 7A, 10V
Power Dissipation (Max):2.4W (Ta), 5W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:8-SOIC (0.154", 3.90mm Width)
Other Names:SI4778DY-T1-E3-ND
SI4778DY-T1-E3TR
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:680pF @ 13V
Gate Charge (Qg) (Max) @ Vgs:18nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):25V
Detailed Description:N-Channel 25V 8A (Tc) 2.4W (Ta), 5W (Tc) Surface Mount 8-SO
Current - Continuous Drain (Id) @ 25°C:8A (Tc)
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