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SI4102DY-T1-E3
SI4102DY-T1-E3
Part Number:
SI4102DY-T1-E3
Manufacturer:
Vishay Precision Group
Description:
Quantity:
28976 Pieces
Delivery Time:
1-2 days
Data sheet:
SI4102DY-T1-E3.pdf

Introduction

SI4102DY-T1-E3 best price and fast delivery.
ZTZ Technology is the distributor for SI4102DY-T1-E3, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for SI4102DY-T1-E3 by email, we will give you a best price according your plan.
Our email: rfq@ztztechnology.com

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Vgs(th) (Max) @ Id:4V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:8-SO
Series:TrenchFET®
Rds On (Max) @ Id, Vgs:158 mOhm @ 2.7A, 10V
Power Dissipation (Max):2.4W (Ta), 4.8W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:8-SOIC (0.154", 3.90mm Width)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:370pF @ 50V
Gate Charge (Qg) (Max) @ Vgs:11nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Drain to Source Voltage (Vdss):100V
Detailed Description:N-Channel 100V 3.8A (Tc) 2.4W (Ta), 4.8W (Tc) Surface Mount 8-SO
Current - Continuous Drain (Id) @ 25°C:3.8A (Tc)
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