| Condition | New and Original |
|---|---|
| Origin | Contact us |
| Distributor | Boser Technology |
| Vgs(th) (Max) @ Id: | 1V @ 250µA (Min) |
| Vgs (Max): | ±20V |
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | SOT-23-3 (TO-236) |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 340 mOhm @ 1.25A, 10V |
| Power Dissipation (Max): | 1.25W (Ta) |
| Packaging: | Tape & Reel (TR) |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
| Other Names: | SI2309DS-T1-E3TR |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 10V |
| FET Type: | P-Channel |
| FET Feature: | - |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Drain to Source Voltage (Vdss): | 60V |
| Detailed Description: | P-Channel 60V 1.25W (Ta) Surface Mount SOT-23-3 (TO-236) |
| Current - Continuous Drain (Id) @ 25°C: | - |
| Email: |