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SI2308BDS-T1-GE3
SI2308BDS-T1-GE3
Part Number:
SI2308BDS-T1-GE3
Manufacturer:
Vishay Precision Group
Description:
Quantity:
62504 Pieces
Delivery Time:
1-2 days
Data sheet:
SI2308BDS-T1-GE3.pdf

Introduction

SI2308BDS-T1-GE3 best price and fast delivery.
ZTZ Technology is the distributor for SI2308BDS-T1-GE3, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for SI2308BDS-T1-GE3 by email, we will give you a best price according your plan.
Our email: rfq@ztztechnology.com

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Vgs(th) (Max) @ Id:3V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:SOT-23-3 (TO-236)
Series:TrenchFET®
Rds On (Max) @ Id, Vgs:156 mOhm @ 1.9A, 10V
Power Dissipation (Max):1.09W (Ta), 1.66W (Tc)
Packaging:Cut Tape (CT)
Package / Case:TO-236-3, SC-59, SOT-23-3
Other Names:SI2308BDS-T1-GE3CT
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:33 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:190pF @ 30V
Gate Charge (Qg) (Max) @ Vgs:6.8nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):60V
Detailed Description:N-Channel 60V 2.3A (Tc) 1.09W (Ta), 1.66W (Tc) Surface Mount SOT-23-3 (TO-236)
Current - Continuous Drain (Id) @ 25°C:2.3A (Tc)
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