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SI2304BDS-T1-GE3
SI2304BDS-T1-GE3
Part Number:
SI2304BDS-T1-GE3
Manufacturer:
Vishay Precision Group
Description:
Quantity:
19277 Pieces
Delivery Time:
1-2 days
Data sheet:
SI2304BDS-T1-GE3.pdf

Introduction

SI2304BDS-T1-GE3 best price and fast delivery.
ZTZ Technology is the distributor for SI2304BDS-T1-GE3, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for SI2304BDS-T1-GE3 by email, we will give you a best price according your plan.
Our email: rfq@ztztechnology.com

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Vgs(th) (Max) @ Id:3V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:SOT-23-3 (TO-236)
Series:TrenchFET®
Rds On (Max) @ Id, Vgs:70 mOhm @ 2.5A, 10V
Power Dissipation (Max):750mW (Ta)
Packaging:Tape & Reel (TR)
Package / Case:TO-236-3, SC-59, SOT-23-3
Other Names:SI2304BDS-T1-GE3TR
SI2304BDST1GE3
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:33 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:225pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:4nC @ 5V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):30V
Detailed Description:N-Channel 30V 2.6A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
Current - Continuous Drain (Id) @ 25°C:2.6A (Ta)
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