| Condition | New and Original |
|---|---|
| Origin | Contact us |
| Distributor | Boser Technology |
| Vgs(th) (Max) @ Id: | 1V @ 250µA |
| Vgs (Max): | ±8V |
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | SOT-23-3 (TO-236) |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 112 mOhm @ 2.8A, 4.5V |
| Power Dissipation (Max): | 860mW (Ta), 1.6W (Tc) |
| Packaging: | Tape & Reel (TR) |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
| Other Names: | SI2301CDS-T1-GE3TR SI2301CDST1GE3 |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 32 Weeks |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds: | 405pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs: | 10nC @ 4.5V |
| FET Type: | P-Channel |
| FET Feature: | - |
| Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
| Drain to Source Voltage (Vdss): | 20V |
| Detailed Description: | P-Channel 20V 3.1A (Tc) 860mW (Ta), 1.6W (Tc) Surface Mount SOT-23-3 (TO-236) |
| Current - Continuous Drain (Id) @ 25°C: | 3.1A (Tc) |
| Email: |