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NTD4858N-1G
NTD4858N-1G
Part Number:
NTD4858N-1G
Manufacturer:
AMI Semiconductor / ON Semiconductor
Description:
Quantity:
3020 Pieces
Delivery Time:
1-2 days
Data sheet:
NTD4858N-1G.pdf

Introduction

NTD4858N-1G best price and fast delivery.
ZTZ Technology is the distributor for NTD4858N-1G, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for NTD4858N-1G by email, we will give you a best price according your plan.
Our email: rfq@ztztechnology.com

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Vgs(th) (Max) @ Id:2.5V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:I-PAK
Series:-
Rds On (Max) @ Id, Vgs:6.2 mOhm @ 30A, 10V
Power Dissipation (Max):1.3W (Ta), 54.5W (Tc)
Packaging:Tube
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:1563pF @ 12V
Gate Charge (Qg) (Max) @ Vgs:19.2nC @ 4.5V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):25V
Detailed Description:N-Channel 25V 11.2A (Ta), 73A (Tc) 1.3W (Ta), 54.5W (Tc) Through Hole I-PAK
Current - Continuous Drain (Id) @ 25°C:11.2A (Ta), 73A (Tc)
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