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NTB52N10T4G
NTB52N10T4G
Part Number:
NTB52N10T4G
Manufacturer:
AMI Semiconductor / ON Semiconductor
Description:
Quantity:
2325 Pieces
Delivery Time:
1-2 days
Data sheet:
NTB52N10T4G.pdf

Introduction

NTB52N10T4G best price and fast delivery.
ZTZ Technology is the distributor for NTB52N10T4G, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for NTB52N10T4G by email, we will give you a best price according your plan.
Our email: rfq@ztztechnology.com

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Vgs(th) (Max) @ Id:4V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:D2PAK
Series:-
Rds On (Max) @ Id, Vgs:30 mOhm @ 26A, 10V
Power Dissipation (Max):2W (Ta), 178W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Other Names:NTB52N10T4GOS
NTB52N10T4GOS-ND
NTB52N10T4GOSTR
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:3150pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:135nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):100V
Detailed Description:N-Channel 100V 52A (Tc) 2W (Ta), 178W (Tc) Surface Mount D2PAK
Current - Continuous Drain (Id) @ 25°C:52A (Tc)
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