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MTB30P06VT4G
MTB30P06VT4G
Part Number:
MTB30P06VT4G
Manufacturer:
AMI Semiconductor / ON Semiconductor
Description:
Quantity:
1059 Pieces
Delivery Time:
1-2 days
Data sheet:
MTB30P06VT4G.pdf

Introduction

MTB30P06VT4G best price and fast delivery.
ZTZ Technology is the distributor for MTB30P06VT4G, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for MTB30P06VT4G by email, we will give you a best price according your plan.
Our email: rfq@ztztechnology.com

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Vgs(th) (Max) @ Id:4V @ 250µA
Vgs (Max):±15V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:D2PAK
Series:-
Rds On (Max) @ Id, Vgs:80 mOhm @ 15A, 10V
Power Dissipation (Max):3W (Ta), 125W (Tc)
Packaging:Cut Tape (CT)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Other Names:MTB30P06VT4GOSCT
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:2190pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:80nC @ 10V
FET Type:P-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):60V
Detailed Description:P-Channel 60V 30A (Tc) 3W (Ta), 125W (Tc) Surface Mount D2PAK
Current - Continuous Drain (Id) @ 25°C:30A (Tc)
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