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MJD117-1G
MJD117-1G
Part Number:
MJD117-1G
Manufacturer:
AMI Semiconductor / ON Semiconductor
Description:
18+
Quantity:
2500 Pieces
Delivery Time:
1-2 days
Data sheet:
MJD117-1G.pdf

Reference Price(In US Dollars)

  • 1 pcs$0.264
  • 10 pcs$0.243
  • 100 pcs$0.222
  • 500 pcs$0.201
  • 1000 pcs$0.18
This price is for reference only.Due to the high price fluctuation,
If you need to get the correct price,Please send your RFQ to rfq@ztztechnology.com

Introduction

MJD117-1G best price and fast delivery.
ZTZ Technology is the distributor for MJD117-1G, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for MJD117-1G by email, we will give you a best price according your plan.
Our email: rfq@ztztechnology.com

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Voltage - Collector Emitter Breakdown (Max):100V
Vce Saturation (Max) @ Ib, Ic:3V @ 40mA, 4A
Transistor Type:PNP - Darlington
Supplier Device Package:I-PAK
Series:-
Power - Max:1.75W
Packaging:Tube
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
Other Names:MJD117-1G-ND
MJD117-1GOS
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:6 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Frequency - Transition:25MHz
Detailed Description:Bipolar (BJT) Transistor PNP - Darlington 100V 2A 25MHz 1.75W Through Hole I-PAK
DC Current Gain (hFE) (Min) @ Ic, Vce:1000 @ 2A, 3V
Current - Collector Cutoff (Max):20µA
Current - Collector (Ic) (Max):2A
Base Part Number:MJD117
Email:

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