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MJD112T4G
MJD112T4G
Part Number:
MJD112T4G
Manufacturer:
AMI Semiconductor / ON Semiconductor
Description:
Quantity:
12500 Pieces
Delivery Time:
1-2 days
Data sheet:
MJD112T4G.pdf

Reference Price(In US Dollars)

  • 1 pcs$0.266
  • 10 pcs$0.245
  • 100 pcs$0.223
  • 500 pcs$0.202
  • 1000 pcs$0.181
This price is for reference only.Due to the high price fluctuation,
If you need to get the correct price,Please send your RFQ to rfq@ztztechnology.com

Introduction

MJD112T4G best price and fast delivery.
ZTZ Technology is the distributor for MJD112T4G, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for MJD112T4G by email, we will give you a best price according your plan.
Our email: rfq@ztztechnology.com

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Voltage - Collector Emitter Breakdown (Max):100V
Vce Saturation (Max) @ Ib, Ic:3V @ 40mA, 4A
Transistor Type:NPN - Darlington
Supplier Device Package:DPAK
Series:-
Power - Max:20W
Packaging:Cut Tape (CT)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Other Names:MJD112T4GOSCT
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:8 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Frequency - Transition:25MHz
Detailed Description:Bipolar (BJT) Transistor NPN - Darlington 100V 2A 25MHz 20W Surface Mount DPAK
DC Current Gain (hFE) (Min) @ Ic, Vce:1000 @ 2A, 3V
Current - Collector Cutoff (Max):20µA
Current - Collector (Ic) (Max):2A
Base Part Number:MJD112
Email:

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