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IRF6608TR1
IRF6608TR1
Part Number:
IRF6608TR1
Manufacturer:
International Rectifier (Infineon Technologies)
Description:
Quantity:
1172 Pieces
Delivery Time:
1-2 days
Data sheet:
IRF6608TR1.pdf

Introduction

IRF6608TR1 best price and fast delivery.
ZTZ Technology is the distributor for IRF6608TR1, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for IRF6608TR1 by email, we will give you a best price according your plan.
Our email: rfq@ztztechnology.com

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Vgs(th) (Max) @ Id:3V @ 250µA
Vgs (Max):±12V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:DIRECTFET™ ST
Series:HEXFET®
Rds On (Max) @ Id, Vgs:9 mOhm @ 13A, 10V
Power Dissipation (Max):2.1W (Ta), 42W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:DirectFET™ Isometric ST
Other Names:SP001528864
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):3 (168 Hours)
Lead Free Status / RoHS Status:Contains lead / RoHS non-compliant
Input Capacitance (Ciss) (Max) @ Vds:2120pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:24nC @ 4.5V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):30V
Detailed Description:N-Channel 30V 13A (Ta), 55A (Tc) 2.1W (Ta), 42W (Tc) Surface Mount DIRECTFET™ ST
Current - Continuous Drain (Id) @ 25°C:13A (Ta), 55A (Tc)
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