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FQA13N80
FQA13N80
Part Number:
FQA13N80
Manufacturer:
AMI Semiconductor / ON Semiconductor
Description:
13+
Quantity:
410 Pieces
Delivery Time:
1-2 days
Data sheet:
FQA13N80.pdf

Introduction

FQA13N80 best price and fast delivery.
ZTZ Technology is the distributor for FQA13N80, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for FQA13N80 by email, we will give you a best price according your plan.
Our email: rfq@ztztechnology.com

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Vgs(th) (Max) @ Id:5V @ 250µA
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-3PN
Series:QFET®
Rds On (Max) @ Id, Vgs:750 mOhm @ 6.3A, 10V
Power Dissipation (Max):300W (Tc)
Packaging:Tube
Package / Case:TO-3P-3, SC-65-3
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:3500pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:88nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):800V
Detailed Description:N-Channel 800V 12.6A (Tc) 300W (Tc) Through Hole TO-3PN
Current - Continuous Drain (Id) @ 25°C:12.6A (Tc)
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