English
FDP51N25
FDP51N25
Part Number:
FDP51N25
Manufacturer:
AMI Semiconductor / ON Semiconductor
Description:
Quantity:
2200 Pieces
Delivery Time:
1-2 days
Data sheet:
1.FDP51N25.pdf2.FDP51N25.pdf

Reference Price(In US Dollars)

  • 1 pcs$1.576
  • 10 pcs$1.45
  • 100 pcs$1.324
  • 500 pcs$1.198
  • 1000 pcs$1.072
This price is for reference only.Due to the high price fluctuation,
If you need to get the correct price,Please send your RFQ to rfq@ztztechnology.com

Introduction

FDP51N25 best price and fast delivery.
ZTZ Technology is the distributor for FDP51N25, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for FDP51N25 by email, we will give you a best price according your plan.
Our email: rfq@ztztechnology.com

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Vgs(th) (Max) @ Id:5V @ 250µA
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-220-3
Series:UniFET™
Rds On (Max) @ Id, Vgs:60 mOhm @ 25.5A, 10V
Power Dissipation (Max):320W (Tc)
Packaging:Tube
Package / Case:TO-220-3
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:10 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:3410pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:70nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):250V
Detailed Description:N-Channel 250V 51A (Tc) 320W (Tc) Through Hole TO-220-3
Current - Continuous Drain (Id) @ 25°C:51A (Tc)
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