| Condition | New and Original |
|---|---|
| Origin | Contact us |
| Distributor | Boser Technology |
| Vgs(th) (Max) @ Id: | 1.1V @ 250µA |
| Vgs (Max): | ±10V |
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | X2-DFN1006-3 |
| Series: | - |
| Rds On (Max) @ Id, Vgs: | 3 Ohm @ 100mA, 4.5V |
| Power Dissipation (Max): | 350mW (Ta) |
| Packaging: | Cut Tape (CT) |
| Package / Case: | 3-XFDFN |
| Other Names: | DMN26D0UFB4-7DICT |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 14 Weeks |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds: | 14.1pF @ 15V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4.5V |
| Drain to Source Voltage (Vdss): | 20V |
| Detailed Description: | N-Channel 20V 230mA (Ta) 350mW (Ta) Surface Mount X2-DFN1006-3 |
| Current - Continuous Drain (Id) @ 25°C: | 230mA (Ta) |
| Email: |