| Condition | New and Original |
|---|---|
| Origin | Contact us |
| Distributor | Boser Technology |
| Vgs(th) (Max) @ Id: | 4V @ 1mA |
| Vgs (Max): | ±20V |
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | TO-220 |
| Series: | U-MOSVIII-H |
| Rds On (Max) @ Id, Vgs: | 3.4 mOhm @ 50A, 10V |
| Power Dissipation (Max): | 255W (Tc) |
| Packaging: | Tube |
| Package / Case: | TO-220-3 |
| Other Names: | TK100E10N1,S1X(S TK100E10N1S1X |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Through Hole |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds: | 8800pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs: | 140nC @ 10V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Drain to Source Voltage (Vdss): | 100V |
| Detailed Description: | N-Channel 100V 100A (Ta) 255W (Tc) Through Hole TO-220 |
| Current - Continuous Drain (Id) @ 25°C: | 100A (Ta) |
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