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SI7772DP-T1-GE3
SI7772DP-T1-GE3
Part Number:
SI7772DP-T1-GE3
Manufacturer:
Vishay
Description:
19+
Quantity:
5389 Pieces
Delivery Time:
1-2 days
Data sheet:
SI7772DP-T1-GE3.pdf

Reference Price(In US Dollars)

  • 1 pcs$0.389
  • 10 pcs$0.358
  • 100 pcs$0.327
  • 500 pcs$0.296
  • 1000 pcs$0.265
This price is for reference only.Due to the high price fluctuation,
If you need to get the correct price,Please send your RFQ to rfq@ztztechnology.com

Introduction

SI7772DP-T1-GE3 best price and fast delivery.
ZTZ Technology is the distributor for SI7772DP-T1-GE3, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for SI7772DP-T1-GE3 by email, we will give you a best price according your plan.
Our email: rfq@ztztechnology.com

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Vgs(th) (Max) @ Id:2.5V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PowerPAK® SO-8
Series:SkyFET®, TrenchFET®
Rds On (Max) @ Id, Vgs:13 mOhm @ 15A, 10V
Power Dissipation (Max):3.9W (Ta), 29.8W (Tc)
Packaging:Original-Reel®
Package / Case:PowerPAK® SO-8
Other Names:SI7772DP-T1-GE3DKR
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:1084pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:28nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):30V
Detailed Description:N-Channel 30V 35.6A (Tc) 3.9W (Ta), 29.8W (Tc) Surface Mount PowerPAK® SO-8
Current - Continuous Drain (Id) @ 25°C:35.6A (Tc)
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