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MJE800G
MJE800G
Part Number:
MJE800G
Manufacturer:
AMI Semiconductor / ON Semiconductor
Description:
Quantity:
877 Pieces
Delivery Time:
1-2 days
Data sheet:
MJE800G.pdf

Reference Price(In US Dollars)

  • 1 pcs$0.227
  • 10 pcs$0.209
  • 100 pcs$0.191
  • 500 pcs$0.173
  • 1000 pcs$0.154
This price is for reference only.Due to the high price fluctuation,
If you need to get the correct price,Please send your RFQ to rfq@ztztechnology.com

Introduction

MJE800G best price and fast delivery.
ZTZ Technology is the distributor for MJE800G, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for MJE800G by email, we will give you a best price according your plan.
Our email: rfq@ztztechnology.com

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Voltage - Collector Emitter Breakdown (Max):60V
Vce Saturation (Max) @ Ib, Ic:2.5V @ 30mA, 1.5A
Transistor Type:NPN - Darlington
Supplier Device Package:TO-225AA
Series:-
Power - Max:40W
Packaging:Bulk
Package / Case:TO-225AA, TO-126-3
Other Names:MJE800GOS
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:2 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Frequency - Transition:-
Detailed Description:Bipolar (BJT) Transistor NPN - Darlington 60V 4A 40W Through Hole TO-225AA
DC Current Gain (hFE) (Min) @ Ic, Vce:750 @ 1.5A, 3V
Current - Collector Cutoff (Max):100µA
Current - Collector (Ic) (Max):4A
Base Part Number:MJE800
Email:

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