| Condition | New and Original |
|---|---|
| Origin | Contact us |
| Distributor | Boser Technology |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Vgs (Max): | ±30V |
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | TO-220AB |
| Series: | - |
| Rds On (Max) @ Id, Vgs: | 930 mOhm @ 5.1A, 10V |
| Power Dissipation (Max): | 167W (Tc) |
| Packaging: | Tube |
| Package / Case: | TO-220-3 |
| Other Names: | *IRFB9N65A |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
| Input Capacitance (Ciss) (Max) @ Vds: | 1417pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 48nC @ 10V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Drain to Source Voltage (Vdss): | 650V |
| Detailed Description: | N-Channel 650V 8.5A (Tc) 167W (Tc) Through Hole TO-220AB |
| Current - Continuous Drain (Id) @ 25°C: | 8.5A (Tc) |
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